PHOTO-SENSITIVE ARRANGEMENT BASED ON ASI: H FOR IMAGE SENSORS.

摘要

1. Photosensitive arrangement, based on hydrogen-containing, amorphous silicon a-Si:H, for linear and planar image sensors, in which arrangement the photoconductor of a-Si:H is arranged as a thin layer in a sandwich structure between two metallically conducting electrodes, of which at least one is of transparent construction, on a substrate, preferably consisting of glass, characterized in that an opaque mask (8) is provided on the light incidence side (hv) of the transparent electrode (7) which is structured so that the edge regions of the individual sensor elements (2, 3, 4) are covered and only the actual sensor surfaces (5, 6, 7) are illuminated.