首页> 外国专利> METHOD AND DEVICE FOR CHEMICAL TREATMENT, PARTICULARLY THERMOCHEMICAL TREATMENT AND CHEMICAL DEPOSITION IN A LARGE VOLUME HOMOGENEOUS PLASMA

METHOD AND DEVICE FOR CHEMICAL TREATMENT, PARTICULARLY THERMOCHEMICAL TREATMENT AND CHEMICAL DEPOSITION IN A LARGE VOLUME HOMOGENEOUS PLASMA

机译:大体积均质等离子体中化学处理,特别是热化学处理和化学沉积的方法和装置

摘要

the chemical treatment process, such as heat treatment or plasma chemical deposition on substrates positioned on one or more substrates (15) is characterized by the combination of simultaneous plasma at low pressure, between 1.33 and 000133 pa a self heating, and (3).the plasma is produced by the excitation of a reactive gaseous environment using a filament thermou00e9missif wave or microwave (21, 22), and maintained within the chamber (1) by a magnetic confinement (18), the heater (3) is independent, as can be part of the contents of the enclosure at a temperature equal to or less than about 550oc.the proportion of calories provided by the plasma heating of substrates is negligible.
机译:化学处理过程,例如热处理或等离子化学沉积在位于一个或多个基底上的基底上(15),其特征在于在1.33至000133 pa的低压下同时进行等离子体自加热,以及(3)。等离子体是通过使用灯丝热波或微波(21、22)激发反应性气体环境而产生的,并通过磁约束(18)保持在腔室(1)中,加热器(3)是独立的在等于或小于约550摄氏度的温度下,外壳内容物的一部分可以忽略不计。等离子加热基板所提供的热量比例可以忽略不计。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号