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Asymmetrical gate turn-off thyristor having anode shorts and a reduced turn-on current

机译:具有阳极短路和降低的导通电流的非对称栅极截止晶闸管

摘要

the traditional thyristor cathode with a layer of n divided into areas such as (11), two principal axes intersecting elongated with a centre and surmounted by a metal layer (11), a trigger (2) with a coating (2a) of the areas (11), a layer of base (3).a first sub layer (30) and a second doped layer (31) and a highly doped layer (4), and a metal anode (areas (4a) and short circuit (32) are formed by the ends of the anode (32) of the sub layer (31) through the layer of the anode (4) in the coating (4a).according to the invention, the areas of short circuit (32), instead of being circular, and in line with the central areas of the cathode are arranged in bands of marginal areas of large unit cells defined by the cathode (11) areas, symmetrically to the centre of these cells.these areas can affect the form of strips parallel to the long axis of the concentric rings or intersecting the axes of cells arranged in rings on their ends. the triggering of the thyristor can be reduced by a factor of four, without affecting the other. performance.
机译:传统的可控硅阴极,其n层被划分为多个区域,例如(11),两个主轴线相交并延长一个中心,并被金属层(11)覆盖,触发器(2)的区域涂层(2a) (11),基底(3)的层。第一子层(30)和第二掺杂层(31)和高掺杂层(4),以及金属阳极(区域(4a)和短路(32) )由子层(31)的阳极(32)的端部穿过涂层(4a)中的阳极(4)的层形成。根据本发明,短路区域(32)代替呈圆形,并且与阴极的中心区域成一直线排列在由阴极(11)区域定义的大型单位电池的边缘区域的带中,这些区域相对于这些电池的中心对称。这些区域会影响条形平行于同心环的长轴或与两端排列成环形的单元的轴相交,可控硅的触发可减少一个因子四,不影响其他。性能。

著录项

  • 公开/公告号EP0364354A1

    专利类型

  • 公开/公告日1990-04-18

    原文格式PDF

  • 申请/专利权人 SGS-THOMSON MICROELECTRONICS S.A.;

    申请/专利号EP19890402792

  • 发明设计人 BERNIER ERIC;

    申请日1989-10-10

  • 分类号H01L29/08;H01L29/74;

  • 国家 EP

  • 入库时间 2022-08-22 06:13:39

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