LOW-NOISE AMPLIFIER HAVING 55 0 K'S NOISE TEMPERATURE

摘要

The low noise amplifier used in the satelite broadcasting receiver includes a ribbon inductors (L1-2) placed between gates of field effect transistors (FET1-2) and microstrip lines (A-D) to get a necessary inducatance at first and second terminals. The input microwave signal passed through the first FET has a noise temperature of 50 oK and a gain of 10 dB. The second output passed through the second FET has a noise temperature of 55oK and a gain of 22 dB. The terminals after the second one include silicon transistors (Q1-3) which are designed to improve the band width and stability.