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Apparatus including resonant-tunneling device having multiple- peak current-voltage characteristics
Apparatus including resonant-tunneling device having multiple- peak current-voltage characteristics
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机译:包括具有多峰值电流-电压特性的谐振隧道装置的设备
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摘要
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g. , in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant- tunneling structure.
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