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LOGIC CIRCUIT USING RESONANT-TUNNELING TRANSISTOR

机译:使用谐振隧道晶体管的逻辑电路

摘要

ABSTRACT, OF THE DISCLOSUREA logic circuit including: a resonant-tunnelingtransistor including a superlattice containing at leastone quantum well layer, and a constant current sourceoperatively connected between a base and an emitter ofthe transistor and supplying a constant current to saidbase. The transistor has a differential negative-resistance characteristic with at least one resonantpoint in a relationship between a current flowing in thebase and a voltage between the base and emitter, andhaving at least two stable base current values at bothsides of the resonant point on the characteristicdefined by the changeable base.emitter voltage. Bysupplying the base.emitter voltage having an amplitudeof at least two amplitudes corresponding to the stablebase current values, the transistor holds data corres-ponding to the base.emitter voltage. The above latchcircuit may be applied to a memory cell and a frequencydivider. The resonant-tunneling transistor may be aresonant-tunneling hot electron transistor (RHET) or aresonant-tunneling bipolar transistor (RBT).
机译:摘要,本公开一种逻辑电路,包括:谐振隧道包含至少包含至少一个超晶格的晶体管一个量子阱层和一个恒流源可操作地连接在发射极的基极和发射极之间晶体管并向其提供恒定电流基础。该晶体管具有差分负-至少一个谐振的电阻特性指出流过的电流之间的关系基极和基极与发射极之间的电压,以及在两个方向上至少具有两个稳定的基本电流值特征点上谐振点的两侧由可变的基极-发射极电压定义。通过提供具有一定幅度的基极-发射极电压至少两个振幅对应于稳定基本电流值,晶体管保持数据对应思考基极-发射极电压。上面的闩锁电路可以应用于存储单元和频率分频器。谐振隧道晶体管可以是谐振隧道热电子晶体管(RHET)或谐振隧道双极晶体管(RBT)。

著录项

  • 公开/公告号CA1291224C

    专利类型

  • 公开/公告日1991-10-22

    原文格式PDF

  • 申请/专利权人 FUJITSU LIMITED;FUJITSU LIMITED;

    申请/专利号CA19860520112

  • 发明设计人 MORI TOSHIHIKO;YOKOYAMA NAOKI;

    申请日1986-10-08

  • 分类号G11C11/34;H03K3/36;G11C11/56;

  • 国家 CA

  • 入库时间 2022-08-22 05:55:58

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