Voltage dependent resistor (varistor) for high-frequency/high-energy applications

摘要

2.1 The invention is based on the object of improving the high-frequency, switching and energy absorption capability of varistors. 2.2 The object is achieved according to the invention in that the semiconductive oxide-ceramic layer (1) is constructed as a spherical shell whose cavity is filled in a contacting manner by a spherical electrode (2), in that the outer surface of the oxide-ceramic layer is surrounded in a contacting manner by a metal-layer electrode (3), in that electrical connecting pieces are fastened to the electrodes (2, 3), in that the connecting piece (4) which is fastened to the spherical electrode (2) electrically passes through the ceramic layer (1) and the outer metal-layer electrode (3), and in that the connecting piece (5) which is fastened to the outer metal-layer electrode (3) is designed as a surface contact which has a spherical contacting surface with respect to the outer metal-layer electrode (3). 2.3 The invention is used in the case of a voltage-dependent resistor (varistor) which is constructed as a cavity body and consists of semiconductive oxide-ceramic on a metal-oxide base. IMAGE