METHOD OF DETERMINING POWER OF TWO-DIMENTIONAL ELECTRON ZONES OF METAL SURFACES

摘要

the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 to metrology u044du043bu0435u043au0442u0440u043eu0444u0438u0437u0438u0447u0435u0441u043au0438u0445 parameters of rigid body, namely the ways of u043eu043fu0440u0435u0434u0435u043bu0435u043du0438u00a0 energy electronic u0441u043eu0441u0442u043eu00a0u043du0438u0439 on top of the metals. the purpose of u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0 - u043fu043eu0432u044b.u0448u0435u043du0438u0435 accuracy and sensitivity of the method with simultaneous simplification.method includes obtaining atomically clean surfaces of metal u0443u0441u043bu043eu0432u0438u00a0u0445 vacuum, causing her u0441u0443u0431u043cu043eu043du043eu0441u043bu043eu0439u043du043eu0439 alkali or u0449u0435u043bu043eu0447u043du043eu0437u0435u043cu0435u043bu044cu043du043e film the metal with the degree of u043fu043eu043au0440u044bu0442u0438u00a0 b, lying in the interval (0, where is the degree of u043fu043eu043au0440u044bu0442u0438u00a0, u0441u043eu043eu0442u0432u0435u0442u0441u0442u0432u0443u044eu0449u0430u00a0 minimum of choice model, radiation model lead to a hundred her film u043cu043eu043du043eu0445u0440u043eu043cu0430u0442u0438u0447u0435u0441u043au0438u043c radiation angle.lying in the interval where u0443u0435u0440 brewster's angle, u043fu043eu043bu00a0u0440u0438u0437u0430u0446u0438u0435u0439 u0438u0437u043bu0443u0447u0435u043du0438u00a0 electric vector in the plane of u043fu0430u0434u0435u043du0438u00a0 u043eu0431u043bu0443u0447u0435u043du0438u00a0. the radiation pattern u043fu0440u043eu0438u0437u0432u043eu0434u00a0u0442 radiation visible spectral area, u043cu0435u043du00a0u00a0 with wavelength in the range of fl i fltp (i u0433u0434u0451 u043au0440u0430u0441u043du0430u00a0 border u0444u043eu0442u043eu044du0444u0444u0435u043au0442u0430.each of the tf u0438u0437u043cu0435u0440u00a0u044eu0442 value integral u0444u043eu0442u043eu044du043cu0438u0441u0441u0438u043eu043du043du043eu0433u043e, current tv (and), then turn the plane u043fu043eu043bu00a0u0440u0438u0437u0430u0446u0438u0438 u0438u0437u043bu0443u0447u0435u043du0438u00a0 90 & deg; again u043cu0435u043du00a0u00a0 length wave 4 within each of the fl u0438u0437u043cu0435u0440u00a0u044eu0442 value integral u0444u043eu0442u043eu044du043cu0438u0441u0441u0438u043eu043du043du043eu0433u043e current is (1), u0432u044bu0447u0438u0441u043bu00a0u044eu0442 attitude 1 | (s) / / is sa), u043du0430u0445u043eu0434u00a0u0442 situationthe spectral peak 4iMevc and u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 desired value u0435u201e of u0441u043eu043eu0442u043du043eu0448u0435u043du0438u00a0 u0435u201e "h c / - JIMai (b, where h is planck's u043fu043eu0441u0442u043eu00a0u043du043du0430u00a0; c is the speed of light. compared with the prototype of the invention has no to u043fu043eu0440u00a0u0434u043eu043a greater precision and sensitivity u043eu043fu0440u0435u0434u0435u043bu0435u043du0438u00a0 u044du043fu0435u0440 - (for two-dimensional electronic zones on top of metals.the invention can be used in the physical changes, u0440u0435u043du0438u00a0u0445 in control u043cu0435u0436u0444u0430u0437u043du044bu0445 borders in the cultivation of multilayer u0441u0442u0440u0443u043au0442u0443u0440.u0432 electronics, as well as u0434u043bu00a0 r u0430u0441u0448u0438u0440u0435u043du0438u00a0 methods spectroscopy surface and in the fundamental u0438u0441u0441u043bu0435u0434u043eu0432u0430u043du0438u00a0u0445 on surface physics. 5). (l to eat eat on her ma.