Integrated diode rectifier bridge - has switching transistors in two adjacent bridge arms controlled by multi-collector transistors in diagonally opposite arms

摘要

The rectifier bridge has multi-collector transistors (T1,T2) used as the diodes in 2 adjacent bridge arms, each of the remaining 2 bridge arms containing a switching transistor (T3,T4) in parallel with a resistance (R2,R3). The bases of the switching transistors (T3,T4) are each coupled to at least one collector of the multi-collector transistor (T1,T2) in the opposite bridge arm, the remaining collectors of the latter being coupled together. Pref. the multi-collector transistors (T1,T2) comprise silicon transistors of pnp type, the switching transistors (T3,T4) being of npn type. ADVANTAGE - Exhibits reduced voltage drop.