Method and apparatus for investigating the latch-up propagation in complementary-metal-oxide semiconductor (CMOS) circuits

摘要

Since known methods for investigating latch-up propagation have only a comparatively slight chronological resolution, a method and apparatus are proposed in which latch-up is periodically triggered and the intensity of the infrared radiation emanating from an integrated circuit is sensed at a plurality of measuring points that cover the circuit in a grid-like manner in order to respectively determine, at the measuring points, within what time span the intensity of the infrared radiation reaches a threshold, and to respectively register a measured value representing the time interval in a location-dependent manner.