首页> 外国专利> DEPOSITION OF THALLIUM OXIDE FOR CONTROLLED THALLIUM SUPERCONDUCTOR FILM, AND CONSTITUTION OF REACTOR

DEPOSITION OF THALLIUM OXIDE FOR CONTROLLED THALLIUM SUPERCONDUCTOR FILM, AND CONSTITUTION OF REACTOR

机译:可控TH超导体薄膜的氧化TH沉积及反应器组成

摘要

PURPOSE: To manufacture a thallium and copper oxide-based high-temperature superconducting film on various substrates by providing a container having a large cavity for containing a substrate and a film, and providing this container with an opening part through which thallium can pass. CONSTITUTION: The container having a cavity 20 which is sufficiently large to contain a substrate and film is provided as the container of a reactor 10. The container has an opening part through which thallium can pass. For example, the reactor 10 is equipped with a top plate 12 and a base plate 14 which function as a susceptor. These plates 12 and 14 function as reproducible reactive substances, which are effective for controlling of the deposition temperature in a heat treatment and give a temperature gradient between a coating film 22 and a deposited film 16 which face it. Further, the cavity 20 is surrounded with a cap plate 22 and a spacer foil. Consequently, the thallium and copper oxide-based high-temperature superconducting film can be manufactured on various substrates.
机译:用途:通过提供具有用于容纳基板和膜的大空腔的容器,并向该容器提供th可穿过的开口部,从而在各种基板上制造基于and和氧化铜的高温超导膜。构成:提供具有空腔20的容器作为反应器10的容器,该空腔足够大以容纳基板和膜。该容器具有开口部分,al可穿过该开口部分。例如,反应器10配备有用作基座的顶板12和底板14。这些板12和14用作可再现的反应性物质,其可有效地控制热处理中的沉积温度,并在涂膜22和面对它的沉积膜16之间产生温度梯度。此外,空腔20被盖板22和隔离膜包围。因此,可以在各种基板上制造基于and和氧化铜的高温超导膜。

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