首页> 外国专利> GRINDING METHOD FOR SI3N4 CERAMICS AND WORK PRODUCT THEREOF

GRINDING METHOD FOR SI3N4 CERAMICS AND WORK PRODUCT THEREOF

机译:SI3N4陶瓷的磨削方法及其工作产品

摘要

PURPOSE:To obtain a sufficiently smooth surface roughness, by performing grinding under the conditions that the contact pressure of the body to be ground and abrasive grain is larger than the hardness of the body to be ground, and the temperature at the contact point of the body to be ground and abrasive grain is more than the temperature causing a plastic fluid bed on the surface of the body to be ground. CONSTITUTION:Si3N4 ceramics is subjected to grinding under the conditions that the contact pressure of the body to be ground and abrasive grain is larger than the hardness of the body to be ground, and the temperature at the contact point of the body to be ground and abrasive grain is more than the temperature causing a plastic fluid bed on the surface of the body to be ground. Consequently, a work product of Si3N4 ceramics whose work surface roughness is Rmax0.1mum in the max.height roughness and the bend strength thereof is =100kg/mm2, is obtained.
机译:目的:通过在要研磨的物体和磨粒的接触压力大于要研磨的物体的硬度以及接触点的温度的条件下进行研磨,以获得足够光滑的表面粗糙度。待磨削的主体和磨料颗粒的温度高于在待磨削的主体表面形成塑料流化床的温度。组成:Si3N4陶瓷要在以下条件下进行研磨:被磨物体与磨料的接触压力大于被磨物体的硬度,以及被磨物体的接触点的温度和磨料颗粒的温度高于导致研磨体表面塑性流化床的温度。结果,获得了Si3N4陶瓷的工作产品,其最大表面粗糙度在Rmax <0.1μm,并且其弯曲强度≥100kg/ mm 2。

著录项

  • 公开/公告号JPH04115859A

    专利类型

  • 公开/公告日1992-04-16

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP19900238479

  • 申请日1990-09-06

  • 分类号B24B7/22;B24B1/00;C04B35/58;C04B35/584;C04B41/91;

  • 国家 JP

  • 入库时间 2022-08-22 05:43:13

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