DIFFUSING SOURCE FOR FLAT SURFACE OF CERIUM PENTAPHOSPHATE FOR LOW TEMPERATURE DOPING

摘要

PURPOSE: To realize uniform and stable doping by using a cerium pentaphosphate composition dissociated at a specified temperature as a low temperature dopant source for the vapor transport of phosphorus oxide to a silicon body. ;CONSTITUTION: The dopant source containing the cerium pentaphosphate composition dissociated at the temperature of the range of about 800-975°C is used as the low temperature dopant source for the vapor transport of phosphorus oxide to the silicon body. For manufacturing the cerium pentaphosphate composition, cerium oxide and ammonium hydrogenphosphate are mixed. Then, it is ground in a ball mill, is burned and is solid phase-reacted so as to manufacture it. Then, water is added to obtained cerium pentaphosphate and a slurry form is obtained. A bonding agent (silicate, for example), additive (surfactant, for example) and the like are added. They are applied to a general substrate by the method of immersion and painting. Thus, the low temperature dopant source can be manufactured.;COPYRIGHT: (C)1992,JPO