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THIN-FILM ELEMENT SENSOR WHOSE TEMPERATURE CHARACTERISTIC IS STABILIZED

机译:具有稳定的温度特性的薄膜传感器

摘要

PURPOSE:To eliminate the temperature difference between a part where elements are concentrated and a part where elements are very few and to improve the detecting accuracy of a thin film element sensor by forming bridge circuits on a substrate by using thin films, and forming heaters surrounding the circuits. CONSTITUTION:An NiFe thin film is formed on a glass substrate 1, and a plurality of bridge circuits 3 are formed by etching. Thin-film ferromagnetic resistor elements at the outer surfaces of the circuits 3 are made to remain in etching. The elements are made to be heaters 2. A voltage is applied to the heaters 2 from an other power supply. Therefore, even if the temperature of a part where elements are concentrated is increased during the detection, the temperature of the outer surfaces where the elements become very few is increased with the heaters 2. Thus the temperature difference can be eliminated. In this way, the irregularities of the temperatures among the elements are corrected, and the detecting accuracy is improved. The device can be manufactured at the same time as the element sensor, and the manufacture can be made simple and easy.
机译:目的:通过使用薄膜在基板上形成桥式电路并形成加热器,以消除元素集中的部分和元素很少的部分之间的温差,并提高薄膜元件传感器的检测精度。电路。构成:在玻璃基板1上形成NiFe薄膜,并通过蚀刻形成多个桥电路3。使电路3的外表面处的薄膜铁磁电阻器元件保留在蚀刻中。这些元件被制成加热器2。从另一电源向加热器2施加电压。因此,即使在检测过程中元素集中的部分的温度升高,元素稀少的外表面的温度也通过加热器2升高。因此,可以消除温度差。以此方式,校正了元件之间的温度不均匀性,并且提高了检测精度。该装置可以与元素传感器同时制造,并且制造可以简单容易。

著录项

  • 公开/公告号JPH03289513A

    专利类型

  • 公开/公告日1991-12-19

    原文格式PDF

  • 申请/专利权人 KOMATSU LTD;

    申请/专利号JP19900091737

  • 发明设计人 YAMAMOTO HIROSHI;

    申请日1990-04-06

  • 分类号G01D3/028;

  • 国家 JP

  • 入库时间 2022-08-22 05:40:08

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