DETECTOR AND MIXER DIODE OPERATIVE AT ZERO BIAS VOLTAGE AND FABRICATION PROCESS THEREFOR

摘要

Abstract of the DisclosureThis invention is directed to an NPIN (orPNIP) diode structure and epitaxial process forfabricating same wherein the thickness and doping levelsof the intermediate layers of the structure are suchthat these layers are substantially depleted of majoritycarriers and therefore enable the structure to beoperated at zero volts DC bias. This structure may beutilized either as an efficient detector diode or amixer diode substantially free of odd order harmonicmixing products, and both devices may be fabricated in asingle molecular beam epitaxial process with theadvantage of high control over epitaxial layer thicknessand impurity concentration.