Logic circuit using bipolar complementary metal oxide semiconductor gate and semiconductor memory device having the logic circuit

摘要

A logic circuit improves a marginal voltage of a p-channel metal oxide semiconductor (MOS) transistor which is driven through a bipolar complementary metal oxide semiconductor (CMOS) gate. The logic circuit has a bipolar CMOS gate (50) having a CMOS gate (51) and output stage bipolar transistors (Tr41, Tr42) for receiving an input signal through the CMOS gate, where the CMOS gate and the output stage bipolar transistors are driven by first and second power source voltages (VCC, VEE), where the first power source voltage is higher than the second power source voltage and the output stage bipolar transistors output a signal as an output signal of the bipolar CMOS gate, and a p-channel MOS transistor (Q61) having a gate supplied with the output signal of the bipolar CMOS gate, a source supplied with a third power source voltage (VCC min ), and a drain from which an output signal of the logic circuit is outputted. The third power source voltage is a predetermined value lower than the first power source voltage and higher than the second power source voltage, thereby able to guarantee a turning OFF of the p-channel MOS transistor due to the improved marginal voltage.