首页> 外国专利> Dry chlorination of PVC at specified temp. with irradiation - in 14-chamber fluid-bed reactor with specified residence time, back-mixing ratio and temp. for each chamber

Dry chlorination of PVC at specified temp. with irradiation - in 14-chamber fluid-bed reactor with specified residence time, back-mixing ratio and temp. for each chamber

机译:在指定温度下对PVC进行干氯化。带辐射-在14室流化床反应器中,具有指定的停留时间,反混比和温度。每个房间

摘要

Process is for the dry chlorination of PVC in a multi-chamber fluid-bed reactor at 55-100 deg. C with a reaction gas contg. 0.18-0.66 kg Cl/kg gas and a radiation dose of 10-30 krad/hr. The PVC is chlorinated in a 14-chamber reactor with residence times as follows: (a) in chamber 1, 30-45 mins., in chambers 2, 3 and 4, residence times in the ratio 0.7:0.4:0.4 w.r.t. 1.0 in chamber 1, (b) in chambers 5-3, the same residence times as in chamber 4, (c) in chambers 9-13, a residence time which is in the ratio 1:0.3 w.r.t. that in chamber 1, and (d) in chamber 14 a residence time which is in the ratio 1:0.35 w.r.t. that in chamber 1; the degree of back-mixing established in the various chambers, as expressed by the ratio between the ratio of reaction mass to mass throughput and the ratio of the area of apertures to the area of chamber partitions in the height of the fluid bed, is 200-1200 in chambers 1-8 and 1200-2000 in chambers 9-13. USE/ADVANTAGE - The process is useful for the prodn. of PVC-C contg. 64-69 wt.% Cl; the invention provides a simplified continuous process for the prodn. of PVC-C with high thermal stability and a narrow range of Cl distribution, without sintering of the PVC-C particl
机译:工艺是在多室流化床反应器中于55-100度对PVC进行干氯化。 C与反应气续。 0.18-0.66 kg Cl / kg气体,辐射剂量为10-30 krad / hr。在14室反应器中对PVC进行氯化,其停留时间如下:(a)在第1室中30-45分钟,在第2、3和4室中,停留时间的比例为0.7:0.4:0.4 w.r.t.。在腔室1中(b)在腔室5-3中的停留时间为1.0,在腔室4(c)在腔室9-13中的停留时间相同,停留时间为1:0.3 w.r.t.。在腔室1中的停留时间为(d)在腔室14中的停留时间为1:0.35 w.r.t. 1号房间在反应室中,各反应室中建立的反混度为200,反应质量与质量通过量之比与流化床高度中孔口面积与室壁面积之比为200在1-8舱中为-1200,在9-13舱中为1200-2000。使用/优势-该过程对产品很有用。 PVC-C续64-69重量%的Cl;本发明为产品提供了一种简化的连续方法。热稳定性高且Cl分布范围窄的PVC-C的制备,无需烧结PVC-C颗粒

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