diode laser for the production strictly monochromatic laser radiation.

摘要

A galliumarsenide or indium-galliumarsenide-phosphide laser diode having a distributed feedback DFB structure (5) in which the current is injected from the contact metallisation layer (8) through the DFB structure, the aim being to maintain the specified dimensions for the distance of the DFB structure (5) from the laser-active layer (3) and from a highly doped zone (7) in order to effect the improvement of the monochromatic characteristic of the laser radiation with minimum additional attenuation. IMAGE