METHOD OF MAKING SURFACE - EMITTING SEMICONDUCTOR LASERS, AND LASERS OBTAINED BY THE PROCESS

摘要

The invention relates to a method for producing a multiple quantum well surface emission laser diode, comprising a single epitaxial operation and a single operation for implantation and diffusion of doping impurities. The lateral dimensions of the laser are defined by applying a masking on the active region before the implantation of doping impurities all around the active region, avoiding the conventional chemical etching step with these adverse consequences on the life expectancy of the finished laser. The construction of the laser according to the method of the invention makes it possible to separately optimize the characteristics of optical confinement (along the axis of propagation of light) and confinement of charge carriers in the active region (perpendicular to the axis of spread). The thicknesses of the epitaxial layers of a first Bragg-type distributed mirror and layers of the active region (quantum wells and intermediate layers or super-networks) are chosen to optimize the gains (in each quantum well) and to minimize losses (especially in the mirror) so as to optimize the threshold current and the energy efficiency of the laser. The invention also relates to lasers made according to the method. Such lasers will be particularly suited to the use of laser diodes in a network, individually or individually controlled. / P