DEVICE FOR CONVERTING INFRARED RADIATION TO ANOTHER ENERGY RADIATION MORE THAN THAT OF INFRARED RADIATION.

摘要

It comprises a multilayer semiconductor structure (4) having at least two layers in which it is possible to respectively contain an electron gas and a hole gas which is regenerated by appropriate means (6) in progress. use of the device. There is at least one electronic state delocalized in the structure, at an energy higher than the energy of the ground state of the electron gas, the difference between these energies being in the infrared range. When the structure is illuminated under a non-normal incidence by radiation (10) whose energy is equal to this difference, the structure emits radiation (14) of higher energy, by radiative recombination involving the holes. BR/ Application to infrared imaging systems. / P