Method of forming a micropattern below the limit of resolution of a photolithographic process

摘要

Method of forming a micropattern below the limit of resolution of a photolithographic process including the steps consisting in applying a layer of photosensitive varnish (11) to a material to be etched (10), exposing the layer of photosensitive varnish (11) by using a mask on which a pattern is formed having a line width and a spacing below the limit of resolution of the layer of photosensitive varnish (11), developing the exposed layer of photosensitive varnish in order to form grooves (13) on the surfaces of the exposed layer of photosensitive varnish, filling the grooves (13) with a material preventing etching (12), resistant to reactive ionic etching with oxygen, etching the layer of photosensitive varnish (11) by reactive ionic etching with oxygen, using the material preventing the etching (12) filling the grooves (13) as a mask, and etching the material by using the pattern which consists of a layer of photosensitive varnish and formed by the etching process, as mask. IMAGE