Semiconductor heterojunction device made by an epitaxial growth technique

摘要

A semiconductor device is disclosed in which an area pattern is formed on a portion of a major surface of a semiconductor substrate over which epitaxial growth layers are formed. In this case, compound semiconductor areas formed by an epitaxial growth method, by the utilization of a surface temperature difference between the major surface of the semiconductor surface and the area pattern in a heating process. By so doing, it is possible to simultaneously obtain the compound semiconductors of a different composition or a different energy gap from each other.