Integratable bipolar level detector for high-frequency sinusoidal signals

摘要

The level detector comprises a first capacitance having a charge circuit including a first transistor controlled by the input signal to be detected (Vi) and a discharge circuit. A second capacitance has a charge circuit including a second transistor controlled by the input signal and a discharge circuit having at least one third transistor having pre-set electrical and geometrical characteristics. The above discharge circuits are connected to the respective inputs of a comparator whose output is representative of the difference between the maximum amplitude of the input signal and a reference level depending on said electrical and geometrical characteristics of said third transistor.