首页>
外国专利>
Permeable base transistor having an electrode configuration for heat dissipation
Permeable base transistor having an electrode configuration for heat dissipation
展开▼
机译:具有用于散热的电极配置的可渗透基极晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
The base layer of a power permeable base transistor is formed as comb structures with grating teeth of the combs extending into active regions of semiconductor material. Extended active regions are separated by inactive regions over which collector contacts extend. Large devices have digitated base layers. The comb structures are fabricated by sputtering a uniform layer of tungsten and forming a nickel mask over the tungsten by both X-ray and photolithography techniques. The tungsten exposed by the nickel mask is then etched to leave the comb structures.
展开▼