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DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER FOR EXCITING FIBER AMPLIFIER

机译:用于激励光纤放大器的分布式反馈型半导体激光器

摘要

PURPOSE: To provide a high output power DFB laser of a high efficiency for EDFA pump by providing a variation in a waveguide structure having a phase shifting of one or a plurality of diffraction gratings or its equivalent effect on one side of the center of a resonator consisting of a waveguide, and setting reflectivities of both end faces to a special value or less. ;CONSTITUTION: A wafer has a composite waveguide structure of an active layer 5 and a waveguide layer 4, and so mesa-etched as to become a stripe. Further, a p-type InP layer 9, an n-type InP layer 10, an n-type InGaAsP layer 11 are formed on the side. Finally, a p-type electrode, and an n-type electrode 13 are formed. Both cleaved end faces are coated with SiNx film 14 to reduce the reflectivities of the end faces to 2% or less. When a forward current is applied to the element, a boundary between the layers 9 and 10 becomes a p-n reverse junction, and hence a current is injected only into the stripe 5. Light goes to and from in a composite waveguide structure (stripe) made of the layers 5, 4 while being fed back by a diffraction grating 2 to cause oscillation.;COPYRIGHT: (C)1993,JPO&Japio
机译:用途:通过提供一种在谐振器中心一侧具有相移一个或多个衍射光栅或其等效效应的波导结构来提供一种变化,从而为EDFA泵提供高效率的高输出功率DFB激光器由波导组成,并将两个端面的反射率设置为特定值或更小。组成:晶片具有有源层5和波导层4的复合波导结构,因此被台面蚀刻成为条纹。此外,在侧面上形成p型InP层9,n型InP层10,n型InGaAsP层11。最后,形成p型电极和n型电极13。两个开裂的端面均涂覆有SiNx膜14,以将端面的反射率降低至2%或更小。当向元件施加正向电流时,层9和10之间的边界变成pn反向结,因此电流仅注入到条纹5中。层5、4的层,同时被衍射光栅2反馈以引起振荡。;版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05145194A

    专利类型

  • 公开/公告日1993-06-11

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19910309188

  • 发明设计人 KINOSHITA JUNICHI;

    申请日1991-11-25

  • 分类号H01S3/18;H01S3/085;H01S3/093;H01S3/094;

  • 国家 JP

  • 入库时间 2022-08-22 05:18:45

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