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PARTICLE SOURCE, ESPECIALLY PARTICLE SOURCE FOR REACTIVE ION ETCHING METHOD AND PLASMA CVD METHOD
PARTICLE SOURCE, ESPECIALLY PARTICLE SOURCE FOR REACTIVE ION ETCHING METHOD AND PLASMA CVD METHOD
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机译:离子源法,等离子体CVD法的粒子源,特别是粒子源
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摘要
PURPOSE: To achieve a simple structure of a particle source and slight contamination of an interior wall and to extend the time during maintenance intervals. CONSTITUTION: A container encircling a plasma 19 is constructed as a parallelepiped-shaped separate plasma chamber 7. The interior chamber of the plasma chamber and the interior chamber of a vacuum chamber are coupled together at the bottom and chamber wall 1 of the plasma chamber by a common opening 3. In the plasma chamber, a protective window 12 is provided immediately in front of a coupling window 16. The protective window is thermally shielded from chamber walls 7c, 7d surrounding the protective window and has an almost fixed interval 13 to the chamber walls. A gas supply part 11 supplying an inert gas or the like to the chamber between the coupling window and the protective window and a gas supply part 6 for supplying a reactive gas to the chamber between the protective window and a substrate 4 are provided separately, and an intermediate plasma 18 can be ignited between the coupling window and the protective window and also can affect the output distribution of microwaves.
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