FUNDAMENTAL CELL AND ARRANGEMENT STRUCTURE OF FUNDAMENTAL CELL

摘要

PURPOSE:To provide a fundamental cell which can achieve the high integration of an SOG-type LSI and which can enhance the degree of freedom of the design of an interconnection pattern and to provide its arrangement structure. CONSTITUTION:Gate electrodes 12 to 15 whose gate-width directions are adopted as those along directions surrounding the central point are formed on a fundamental cell 11a. The gate electrodes are cut into four regions by using two straight lines which pass the central point. The individual gate electrodes 14, 15, on one side, which are faced are formed on P-regions 16; the individual gate electrodes 12, 13, on the other side, which are faced are formed on N- regions 18. N-channels are formed under the gate electrodes 14, 15; P-channels are formed under the gate electrodes 12, 13. N+ type diffusion layers 19 are formed on both sides of the N-channel layers; p+ type diffusion layers 20 are formed on both sides of the P-channel layers.