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DRIVE CIRCUIT OF ELECTROSTATIC INDUCTION TYPE SELF ARC-EXTINGUISHING ELEMENT

机译:静电感应式自熄弧元件的驱动电路

摘要

PURPOSE: To prevent breakage of an electrostatic induction type self arc- extinguishing element (IGBT) even when load is short-circuited and overcurrents are generated by arc-extinguishing the IGBT after a fixed time when load connected in series with the IGBT is short-circuited and the voltage of the connecting section of load and the IGBT abnormally rises. ;CONSTITUTION: When load 23 is short-circuited and the collector voltage of an IGBT 21 is increased when the IGBT 21 is operated normally, the base voltage of a P-N-P transistor TR 7 is boosted and the TR 7 is turned off. A voltage drop by a resistor is generated and the gate of the IGBT 21 is given one-stage low voltage through N-P-N transistors(TR) 11, 10, and the ON resistance of the IGBT 21 is increased and the currents of the IGBT 21 are reduced. The base voltage of a TR 3 is lowered up to a fixed value after a fixed time composed of a time constant by a capacitor 4 and a resistor 5, and the TR 3 is turned ON and a TR 13 is turned ON. The gate voltage of the IGBT 21 is reduced up to the negative voltage of a DC power supply 2, and an arc is extinguished.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:为防止静电感应型自灭弧元件(IGBT)破损,即使负载短路,且与IGBT串联连接的负载短时在固定时间后因IGBT灭弧而产生过电流,电路和负载和IGBT的连接部分的电压异常上升。 ;构成:当IGBT 21正常工作时,当负载23短路且IGBT 21的集电极电压升高时,P-N-P晶体管TR 7的基极电压升高,TR 7截止。产生由电阻器引起的电压降,并且通过NPN晶体管(TR)11、10为IGBT 21的栅极提供一级低电压,并且增加了IGBT 21的导通电阻,并且IGBT 21的电流为减少。在由时间常数组成的固定时间之后,TR 3的基极电压通过电容器4和电阻器5降低到固定值,并且TR 3接通并且TR 13接通。 IGBT 21的栅极电压降低到直流电源2的负电压,并且熄灭电弧。COPYRIGHT:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05292654A

    专利类型

  • 公开/公告日1993-11-05

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP19920092619

  • 发明设计人 KAWAKAMI TAKAYOSHI;

    申请日1992-04-13

  • 分类号H02H7/20;G05F1/56;H01L29/74;

  • 国家 JP

  • 入库时间 2022-08-22 05:16:49

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