首页> 外国专利> PRODUCING METHOD FOR STANDARD SAMPLE FOR CALIBRATING MEASURED DISPLACEMENT, STANDARD SAMPLE AND MEASURING DEVICE AND CALIBRATING METHOD

PRODUCING METHOD FOR STANDARD SAMPLE FOR CALIBRATING MEASURED DISPLACEMENT, STANDARD SAMPLE AND MEASURING DEVICE AND CALIBRATING METHOD

机译:用于校准测量位移的标准样品的制造方法,标准样品和测量装置以及校准方法

摘要

PURPOSE: To obtain a standard sample for exactly calibrating the roughness in angstroms to tens angstrom by etching with exactly controlling the etching grade of pattern difference in level using an etching agent with very slow etching speed. ;CONSTITUTION: For smoothing a material surface, a material, silicone wafer 101 for example, is oxidized pyrogenically to form a pseudo oxidation film 102. By dipping in buffered fluoric acid added with a surface active agent, the pseudo oxidation film 102 is removed to obtain a silicone wafer 103. With dry oxigen to make difference in level, a thermal oxidation film 104 is grown. As an etching mask to make the pattern of difference in level 107, a pattern mask 105 is added with a resist. The initial thickness of the oxidation film 104 is measured. After etching an oxidation film, it becomes an oxidation film 108 with difference in level. If the desired difference in level is small, the etching agent is adjusted one with low etching speed. After measuring the oxidation film 109 and eliminating the resist, a standard sample 110 is obtained.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:获得标准样品,以通过使用非常慢的蚀刻速度的蚀刻剂精确控制图形水平差的蚀刻等级,通过蚀刻来精确地将粗糙度校正在埃至数十埃之间。 ;组成:为了使材料表面光滑,例如将硅晶片101等材料热解氧化以形成假氧化膜102。通过将其浸入添加有表面活性剂的缓冲氟酸中,可以去除假氧化膜102得到有机硅晶片103。用干燥的氧气使水平不同,生长热氧化膜104。作为使水平差107的图案不同的蚀刻掩模,在图案掩模105上添加抗蚀剂。测量氧化膜104的初始厚度。蚀刻氧化膜后,成为水平不同的氧化膜108。如果期望的水平差小,则以低蚀刻速度将蚀刻剂调整为一种。在测量氧化膜109并去除抗蚀剂之后,获得标准样品110 。;版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05196559A

    专利类型

  • 公开/公告日1993-08-06

    原文格式PDF

  • 申请/专利权人 OMI TADAHIRO;

    申请/专利号JP19920030062

  • 发明设计人 OMI TADAHIRO;

    申请日1992-01-21

  • 分类号G01N1/00;G01B21/30;G01N1/28;

  • 国家 JP

  • 入库时间 2022-08-22 05:15:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号