首页> 外国专利> METHOD FOR DOPING BASE MATERIAL WITH DOPING MATERIAL FOR PRODUCING COMPOUND OR ALLOY IN USE OF SPUTTERING CATHODE AND DEVICE FOR PERFORMING THIS METHOD

METHOD FOR DOPING BASE MATERIAL WITH DOPING MATERIAL FOR PRODUCING COMPOUND OR ALLOY IN USE OF SPUTTERING CATHODE AND DEVICE FOR PERFORMING THIS METHOD

机译:用溅射阴极生产化合物或合金的掺杂材料与基体材料的浸渍方法及执行该方法的装置

摘要

PURPOSE: To provide a method, in the use of a sputtering cathode working in a magnetron mode, for forming a compound and an alloy on a substrate as coating, furthermore for doping a base material and moreover for producing this coating advantageously from the viewpoint of cost. ;CONSTITUTION: A target is composed of plural parts 37 and 38, the center target 37 is composed of a doping material, and the outside target 38 is composed of a base material. The magnet arrayed body of a sputtering cathode 23 is composed of a center magnet unit 29 capable of positioning and magnet units 25, 26, 27 and 28 having fixed positions and surrounding the center magnet unit 29, by which, as to the target parts 37 and 38, sputtering is made possible by respectively using the specially selected magnetic fields, different materials can be sputtered at different rates, and optional doping is made possible.;COPYRIGHT: (C)1993,JPO
机译:用途:提供一种方法,该方法利用以磁控管模式工作的溅射阴极,在基材上形成化合物和合金作为涂层,此外用于掺杂基材,并且从以下方面有利地制备该涂层的方法:成本。组成:靶材由多个部分37和38组成,中心靶材37由掺杂材料组成,外部靶材38由基材组成。溅射阴极23的磁体阵列体由能够定位的中央磁体单元29和具有固定位置并围绕该中央磁体单元29的磁体单元25、26、27和28构成,由此,作为目标部分37 38,分别通过使用特殊选择的磁场使溅射成为可能,可以以不同的速率溅射不同的材料,并且可以进行可选的掺杂。;版权所有:(C)1993,JPO

著录项

  • 公开/公告号JPH0578837A

    专利类型

  • 公开/公告日1993-03-30

    原文格式PDF

  • 申请/专利权人 LEYBOLD AG;

    申请/专利号JP19920050353

  • 发明设计人 LATZ RUDOLF;

    申请日1992-03-09

  • 分类号C23C14/35;C23C14/08;C23C14/54;

  • 国家 JP

  • 入库时间 2022-08-22 05:14:12

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