GaAs heterostructure metal-insulator-semiconductor integrated circuit and method for its fabrication

摘要

A heterostructure metal insulator semiconductor integrated circuit comprising a thin insulating Si/SiO₂ dielectric layer (22, 24) between a layer (20) of undoped AlGaAs and a layer (26) of metal silicide results in, for instance, GaAs field-effect-transistors (30) having much less gate current leakage and greater voltage range than like technology of the related art.