首页> 外国专利> METHOD OF DETERMINING PLASMA GENERATION THRESHOLD UNDER ACTION OF MONOPULSE LASER RADIATION ON POLISHED METALLIC SURFACE

METHOD OF DETERMINING PLASMA GENERATION THRESHOLD UNDER ACTION OF MONOPULSE LASER RADIATION ON POLISHED METALLIC SURFACE

机译:确定抛光金属表面单脉冲激光辐射下等离子体产生阈值的方法

摘要

Usage: to determine the plasma formation threshold at action mono2 pulsed laser light on the polished metal surface, in particular to determine the radiation resistance of the metal mirror surface. SUMMARY: land surface under study monopulse sequentially irradiated with laser radiation while increasing the laser pulse energy and energy density are recorded simultaneously in claim THe, then after each examined surface portions monopulse additionally probed elliptically polarized monochromatic radiation with a wavelength in the visible spectrum at an angle QH50-75 degrees, measured phase shift A reflected radiation relative to the incident, plotting a graph of shear energy Dot density n phases laser radiation, and a plasma formation threshold is judged by the magnitude of the laser radiation energy density, corresponding to the maximum hopping parameter on the curve at which dA / dE On d D / dE 0, where ue energy density of the laser radiation .5 yl. JV with oo Oh oh yu yu 4
机译:用途:确定在抛光的金属表面上作用单脉冲单色激光时的等离子体形成阈值,特别是确定金属镜面的抗辐射性。发明内容:在权利要求THe中,同时记录了被研究的陆地单脉冲依次照射激光辐射,同时增加了激光脉冲能量和能量密度的情况,然后在每个被检查的表面部分之后,单脉冲另外探测具有可见光谱波长的椭圆偏振单色辐射。角度QH50-75度,测得的相移A相对于入射光的反射辐射,绘制了剪切能点密度n相激光辐射图,并根据激光辐射能量密度的大小来判断等离子体形成阈值dA / dE On d D / dE 0时曲线上的最大跳跃参数,其中激光辐射的能量密度为.5 yl。与oo Oh oh yu yu合资4

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