Method for the preparation of a logical matrix with polysilicon - emitter contact and thereby hergstelltes component.

摘要

A Schottky diode includes a metal layer (62) on an epitaxial region (24). The metal layer (62) is covered with a dielectric layer (64). An area (90) on the metal is exposed by opening a via (68) in the dielectric. The exposed area (90) is spaced from a buried perimeter (92) of the metal layer (62). A conductive lead (86) is formed in the Schottky via (68). A poly emitter terminal (46) connects a small sized emitter (50) formed in an epitaxial region (24) to the exterior. Poly emitter (46) presents a large area (76) to the exterior for alignment with a via (66) through a passivating dielectric layer (64), thus alleviating alignment problems.