EPITAXED SEMICONDUCTOR DISC WITH A LOW-OXYGEN ZONE, ADJUSTABLE EXPANSION AND METHOD FOR THEIR PRODUCTION

摘要

To make high-quality semiconductor-based electronic components, semiconductor wafers are required which have a substantially lower oxygen concentration in the region of the wafer near the surface, in which the components are integrated, than in the remaining region of the wafer. This region, which is known as a "denuded zone" has hitherto been obtained by prolonged annealing of the wafers in a batch reactor as a consequence of partial outdiffusion of oxygen from the substrate. In the process according to the invention, the low-oxygen region is produced by the epitaxial deposition of two differently doped semiconductor layers on the wafer surface in a single-wafer reactor.