Photodiode array mfr. for focal plane array - forming discrete photo diode pixels by photochemical production of grooves in thinned n-conductivity substrate

摘要

A p-conducting layer (2) is produced on a surface of a wafer shaped n-conductivity In-Sb - substrate (1) by diffusion, and a p-n junction formed. A transparent conductive layer (3) is formed on the p-conductivity layer. An anti-reflex layer (4) is formed on the conductive layer. A wafer-shaped sapphire substrate (5) is glued to the anti-reflex layer by a transparent adhesive. The n-conductivity substrate is made thinner and by photochemical production of grooves discrete diode pixels are produced. Inactive material (7) is formed in the grooves. Contact to an electronic component (10) is implemented by contacts (9) assigned to single diode pixels. ADVANTAGE - Array admits radiation to p-n junction from p-conductivity side of In-Sb substrate.