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Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
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机译:利用氢自由基辅助cvd方法利用片状氢气等离子体形成功能性沉积膜的方法
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摘要
A process for forming a functional deposited film which comprises: introducing a precursor composed mainly of Group IV elements to be constituents for a deposited film to be formed into a substantially enclosed film-forming space being kept at 0.1 to 50 mTorr into which hydrogen gas plasma is drawn in a sheet-like state and a substrate is positioned parallel to said sheet-like hydrogen gas plasma, and exhausting the gases in the film-forming space in the direction perpendicular to the sheet-like hydrogen gas plasma and the substrate, said precursor being generated in an precursor generation space situated separately from said film-forming space, said sheet-like hydrogen gas plasma being formed such that a distance (L) of 5 to 50 mm is established between the boundary thereof and the surface of the substrate, said precursor being introduced through gas feed means positioned substantially in said distance (L).
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