AMORPHOUS ALLOY THIN STRIP ENHANCED IN CRYSTALLIZATION RESISTANCE ON SURFACE

摘要

PURPOSE: To produce an amorphous alloy thin strip having high resistivity by prescribing the weight ratios of Si, Sn or the like in an oxide contg. layer on the surface of an amorphous alloy thin strip in which specified amounts of Sn or the like are incorporated into essential components to those in a matrix. ;CONSTITUTION: An amorphous alloy thin strip having a compsn. of MaXbSicBdCe (M denotes Fe, Co or the like, X denotes Mo, Nb or the like and, by atomic %, a; 60 to 90, b; 0 to 6, c; 1 to 19, d; 7 to 20 and e; 0 to 4) as essential components and in which 0.01 to 1.0wt.% of one or more kinds among Sn, Sb or the like are incorporated into the essential components is produced by a one side cooling method. At this time, the topmost surface of the thin strip has a layer contg. oxides in which some of the constituting elements are oxidized, and in the surface layer of ≤100Å in the depth direction from the surface of the thin strip, at the time of defining the average wt.% of Si in the oxides as Wso, the average wt.% of Sn, Sb or the like as Wao, the average wt.% of Si in the amorphous alloy matrix as Wsm and the average wt.% of Sn, Sb or the like as Wam, Wso/Wsm≤Wao/Wam is regulated.;COPYRIGHT: (C)1994,JPO