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Superconducting tunnel junction photodetector

机译:超导隧道结光电探测器

摘要

PURPOSE:To convert weak signal to an electric signal up to a high frequency in a broad wavelength region of infrared rays, by providing a tunnel barrier vertically with respect to an intermediate layer in an upper electrode, on which light is projected, confining optically excited quasi-particles, utilizing high sensitivity of a superconductive optical detector, and implementing a high speed characteristic. CONSTITUTION:A low superconductive electrode 2 is provided on a substrate 1. An intermediate layer 3 of an insulator or a semiconductor, which forms a tunnel barrier, is formed on the electrode 2. An upper electrode 5 of a superconductor, which includes a tunnel barrier in the film, is provided. The upper and lower electrodes of the superconductor are isolated by an insulating layer 6. Each layer of these four layers 2, 3, 5 and 6 can be manufactured by a thin film forming technology utilizing a vacuum evaporation method or a sputtering method using a suitable target and a pattern forming technology utilizing a lithography method.
机译:目的:通过相对于上部电极的中间层垂直设置隧道势垒,在较宽的红外线波长范围内将弱信号转换为高达高频的电信号,光在其上投射,限制了光激发准粒子,利用超导光学检测器的高灵敏度,并实现了高速特性。组成:低超导电极2设置在基板1上。绝缘体或半导体的中间层3形成隧道势垒,形成在电极2上。超导体的上电极5包括隧道在膜中提供了屏障。超导体的上下电极由绝缘层6隔离。这四个层2、3、5和6中的每一层都可以通过使用真空蒸发法的薄膜形成技术或使用合适的溅射法来制造。靶和利用光刻方法的图案形成技术。

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