首页> 外国专利> METHOD FOR LABELING DISCRETE ATOMS OR ATOM GROUPS ON SOLID SURFACE STABLY WITH LAPSE OF TIME AND METHOD FOR STORING INFORMATION UNIT OF ATOMIC ARRANGEMENT BY UTILIZING THE METHOD

METHOD FOR LABELING DISCRETE ATOMS OR ATOM GROUPS ON SOLID SURFACE STABLY WITH LAPSE OF TIME AND METHOD FOR STORING INFORMATION UNIT OF ATOMIC ARRANGEMENT BY UTILIZING THE METHOD

机译:随时间流逝在固体表面上稳定地标记离散原子或原子团的方法和利用该方法存储原子排列信息单元的方法

摘要

PURPOSE: To stabilize the accumulation of information with lapse of time by enabling the selective removal of atoms from a solid surface without changing the lattice structure of the remaining atoms at the time of labeling the discrete atoms or atom groups including compds. or completely intimately mixed allays on the solid surface. ;CONSTITUTION: A high information density is obtd. by storing the information on the atom regions at the time of storing or writing information units. Namely, erasure is made possible again by recombining vacancy to the atoms or atom groups, by which the restoration of the original state is made possible. The recombination is effected on the surface of the solid and more particularly the semiconductor layer of doped chalcogenide, etc., to this size, for example, by using the needle-like electrode of a sensitive surface scanning probe of a scanning tunnel microscope or scanning atomic microscope and applying a short time of an electric field or magnetic field to the surface. The max. limit electric field surface of the semiconductor layer surface of this kind of the probe is 10 to 0.1nm and, therefore, a linear influence is exerted on the electron structure and the desorption of the specific one kind of the atoms is made possible.;COPYRIGHT: (C)1994,JPO
机译:目的:通过在不离散原子或包括compds的原子团标记时,从固体表面选择性去除原子而不改变剩余原子的晶格结构,来稳定信息的积累。或完全紧密混合的固体表面上的小条。 ;构成:信息密度高。通过在存储或写入信息单元时将信息存储在原子区域上。即,通过将空位重新结合到原子或原子基团上,再次使擦除成为可能,由此可以恢复原始状态。例如通过使用扫描隧道显微镜的敏感表面扫描探针的针状电极或扫描,在固体的表面上进行重组,更具体地在掺杂的硫族化物等的半导体层等上进行重组。原子显微镜,并在表面上施加短时间的电场或磁场。最高这种探针的半导体层表面的极限电场表面为10到0.1nm,因此,对电子结构产生线性影响,使得特定一种原子的解吸成为可能。 :(C)1994,日本特许厅

著录项

  • 公开/公告号JPH06103619A

    专利类型

  • 公开/公告日1994-04-15

    原文格式PDF

  • 申请/专利权人 BASF AG;

    申请/专利号JP19910157276

  • 申请日1991-06-28

  • 分类号G11B9/00;G01R33/10;G01R33/12;G11C13/00;H01J37/28;

  • 国家 JP

  • 入库时间 2022-08-22 04:52:15

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