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FABRICATION OF SIC MIRROR FOR REFLECTING RADIOACTIVE RAY AND X-RAY

机译:反射放射线和X射线的SIC镜的制造

摘要

PURPOSE: To provide an SiC mirror for reflecting radioactive ray and X-rays having long service life in which exfoliation/deformation of SiC film and occurrence of pinhole are retarded and possibility of lowering ambient vacuum during operation is lowered significantly. ;CONSTITUTION: Ultrafine powder of SiC having purity of 99% or above, particle size of 0.01-0.2μm, and surface area of 30m2/g is placed in a carbon mold without adding any sintering accelerator. It is then sintered in an inert atmosphere at a temperature of 1900-2200°C while applying pressure of 50kg/cm2 or above thus producing a sintered SiC base material. An SiC film is then formed by CVD on the surface of the sintered SiC base material and subjected to mirror polishing.;COPYRIGHT: (C)1994,JPO
机译:用途:提供一种用于反射具有长使用寿命的放射性射线和X射线的SiC反射镜,该反射镜可以抑制SiC膜的剥落/变形和针孔的发生,并显着降低操作过程中降低环境真空的可能性。 ;组成:将纯度为99%以上,粒径为0.01-0.2μm,表面积为30m 2 / g的SiC超细粉末置于碳模具中,不添加任何烧结促进剂。然后在惰性气氛中在1900-2200℃的温度下烧结,同时施加50kg / cm 2 或更高的压力,从而产生烧结的SiC基材料。然后通过CVD法在烧结的SiC基体材料的表面上形成SiC膜,并对其进行镜面抛光。; COPYRIGHT:(C)1994,JPO

著录项

  • 公开/公告号JPH06281795A

    专利类型

  • 公开/公告日1994-10-07

    原文格式PDF

  • 申请/专利权人 TOSHIBA CERAMICS CO LTD;

    申请/专利号JP19930071626

  • 发明设计人 FUKUOKA SEIICHI;TSUJI NAOKI;

    申请日1993-03-30

  • 分类号G21K1/06;G02B5/08;

  • 国家 JP

  • 入库时间 2022-08-22 04:49:56

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