Method for measuring temperature based on infrared light and apparatus for measuring temperature based on infrared light

摘要

A method for measuring temperature based on infrared light which measures the temperature of a semiconductor element, the surface layer of which is formed with two kinds of materials having different emissivities and optical reflectances, based on the amount of infrared emission incident on an image taking means according to the invention, comprises the steps of taking an image by diffusing and letting the incident be the reflected light of a beam of light incident on the surface of the above semiconductor element on the light receiving face of the image taking means, followed by determining the area ratio at which each of the above two kinds of materials occupies the surface of the above semiconductor element by comparing the average brightness value of the above image with the brightness value of an image for the case that each of the above two kinds of materials independently forms the surface layer of the above semiconductor element, and obtaining the weighted average of the emissivities of the above two kinds of materials with the area ratio at which each of the above two kinds of materials occupies the surface of the above semiconductor element, followed by calculating the temperature of the above semiconductor element based on the weighted average and the actual amount of infrared emission. IMAGE