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Monolithic integrated wideband power amplifier

机译:单片集成宽带功率放大器

摘要

A monolithically integrated broadband power amplifier comprising a push-pull output stage (gt) which consists of bipolar NPN transistors (t1, t2, t3, t4, te) and contains an operating point adjuster (m), a driver stage (tr) and an output stage (p). An input voltage (vi) is supplied as difference signal to the input of a differential stage (d), the output signal of which drives the push-pull output stage (gt). The operating point setting and the overall gain, which are temperature-independent, can be changed independently of one another by internal resistance calibration. The transistors (t1, t2, t3, t4) of the push-pull output stage (gt) consist of parallel-connected part- transistors (n1; n2; tm) which are paired with respect to their characteristics by means of layout measures and are adapted to the respective special use within the push-pull output stage (gt), the parasitic capacitances and parasitic resistances being kept small in order to keep the upper cut-off frequency as high as possible. IMAGE
机译:一种单片集成宽带功率放大器,包括一个推挽输出级(gt),该级由双极NPN晶体管(t1,t2,t3,t4,te)组成,并包含一个工作点调节器(m),一个驱动器级(tr)和一个输出级(p)。将输入电压(vi)作为差信号提供给差分级(d)的输入,该差分级的输出信号驱动推挽输出级(gt)。与温度无关的工作点设置和总增益可以通过内部电阻校准相互独立地更改。推挽输出级(gt)的晶体管(t1,t2,t3,t4)由并联的部分晶体管(n1; n2; tm)组成,这些部分晶体管通过布局措施和特性在特性上配对它们适用于推挽输出级(gt)中的各种特殊用途,寄生电容和寄生电阻保持较小,以便保持较高的截止频率。 <图像>

著录项

  • 公开/公告号EP0316480B1

    专利类型

  • 公开/公告日1994-02-16

    原文格式PDF

  • 申请/专利权人 DEUTSCHE ITT INDUSTRIES GMBH;

    申请/专利号EP19870117136

  • 发明设计人 NOVOTNY BERND;SCHILLING HARALD;

    申请日1987-11-20

  • 分类号H03F3/30;

  • 国家 EP

  • 入库时间 2022-08-22 04:40:07

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