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Monolithic integrated wideband power amplifier
Monolithic integrated wideband power amplifier
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机译:单片集成宽带功率放大器
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摘要
A monolithically integrated broadband power amplifier comprising a push-pull output stage (gt) which consists of bipolar NPN transistors (t1, t2, t3, t4, te) and contains an operating point adjuster (m), a driver stage (tr) and an output stage (p). An input voltage (vi) is supplied as difference signal to the input of a differential stage (d), the output signal of which drives the push-pull output stage (gt). The operating point setting and the overall gain, which are temperature-independent, can be changed independently of one another by internal resistance calibration. The transistors (t1, t2, t3, t4) of the push-pull output stage (gt) consist of parallel-connected part- transistors (n1; n2; tm) which are paired with respect to their characteristics by means of layout measures and are adapted to the respective special use within the push-pull output stage (gt), the parasitic capacitances and parasitic resistances being kept small in order to keep the upper cut-off frequency as high as possible. IMAGE
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