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Process for determining the recombination velocity of minority charges at the borders between semiconductors and other substances

机译:确定半导体和其他物质之间边界处少数电荷复合速度的过程

摘要

For the two-stage measuring process, one half cell (1, 2) with an electrode (7, 8) is in each case attached to the front (9) and rear (10) of the semiconductor wafer (3), only the half cell (2) at the rear (10) being filled with an electrolyte (6) in the first measuring step. The minority-carrier photocurrent I2' flowing between electrode (8) and semiconductor surface (10) during irradiation of the front (9) of the semiconductor crystal (3) of the rear half cell (2) is dependent on the speed of recombination S at the front (9). In the second measuring step, the front half cell (1) is also filled with electrolyte (5), and both the rear photocurrent I2 with the now negligible influence of S, and the front photocurrent I1 are measured. From the photocurrents measured, the speed of recombination can be calculated with the aid of a mathematical formula. The local distribution of the speed of recombination is obtained with point-shaped irradiation and screening over the crystal wafer (3). …IMAGE…
机译:对于两阶段测量过程,将带有电极(7、8)的一个半电池(1、2)分别连接到半导体晶片(3)的正面(9)和背面(10),在第一测量步骤中,在后部(10)的半电池(2)中充满了电解质(6)。在后半电池(2)的半导体晶体(3)的前部(9)的辐照期间在电极(8)和半导体表面(10)之间流动的少数载流子光电流I2'取决于复合速度S在前面(9)。在第二测量步骤中,前半电池(1)也充满电解质(5),并且测量了具有现在可以忽略的S的后光电流I2和前光电流I1。根据测得的光电流,可以借助数学公式计算重组速度。通过在晶体晶片(3)上进行点形照射和筛选获得重组速度的局部分布。 …<图像>…

著录项

  • 公开/公告号EP0400386B1

    专利类型

  • 公开/公告日1994-08-24

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号EP19900109038

  • 发明设计人 FOELL HELMUT DR.;LEHMANN VOLKER DR.;

    申请日1990-05-14

  • 分类号G01R31/308;

  • 国家 EP

  • 入库时间 2022-08-22 04:39:56

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