COMPLEMENTARY BIPOLAR TRANSISTORS HAVING HIGH EARLY VOLTAGE, HIGH FREQUENCY PERFORMANCE AND HIGH BREAKDOWN VOLTAGE CHARACTERISTICS AND METHOD OF MAKING SAME

摘要

The invention relates to complementary bipolar transistors and to a method for fabricating such transistors on a dielectrically insulated substrate. Both NPN and PNP regions include an emitter (74, 80) which is diffused from an emitter polysilicon contact (68A, 68B) and an extrinsic base (52, 56) which is diffused. made from a base polysilicon contact (40, 42), the emitter polysilicon contact being separated from the base polysilicon contact by an oxide / nitride side wall. It is thus possible to obtain flat emitters and a short distance between the emitters and the extrinsic bases, as well as high performance.