Method of measuring alignment accuracy / stepping accuracy of exposure apparatus

摘要

According to another aspect of the present invention, there is provided a method of measuring a stepping accuracy of an alignment / exposure apparatus, including: forming a photoresist film on a wafer; forming a photoresist film on the wafer using a reticle having at least a pair of predetermined patterns of precision measurement patterns in a scribe line-Performing a primary alignment / exposure to the photoresist, moving the alignment / exposure apparatus by one step pitch, and using the same reticle as in the primary alignment / exposure, Performing secondary alignment / exposure so that the photoresist portions corresponding to the pattern for precision measurement located at the side of the wafer are overlapped with each other, developing the exposed wafer, and inspecting the pattern for precision measurement which is subjected to overlapping exposure and patterned The stepping pitch error of the alignment / exposure apparatus can be quickly and simply detected without error and the wafer frame We can verify vernacularity.