High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers

摘要

The first semiconductor substrate (8) face (H1) is for a cathode (K), while the other one (H2) is for an anode (A). Within the substrate and between the two opposite faces is a succession of differently doped layers, contg. progressively from the first to the second face an n emitter (12), a p base (13), an n base (14), and a p emitter (15). In the first face, a thyristor (6) igniting gate structure is distributed. The GTO n-emitter is distributed over the first face in the form of narrow, elongate cathode fingers (11), surrounded by the gate metallising film. The doping concentration of the p base is less than 10 power 17 per cubic cm. USE/ADVANTAGE - E.g. for thyratron frequency thyristor, with improved switching characteristic without GTO drawbacks.