Implanting deep buried impurity zone in semiconductor and resist compsn.

摘要

Formation of a deep buried impurity zone (I) in a semiconductor substrate (II) comprises (a) forming a resist film (III), at least 3 microns thick, on (II); (b) selectively exposing (III) to produce an image; (c) baking (III) at 110-130 deg.C after exposure and before development; (d) developing and then washing (III) to develop a resist pattern (IV); (e) baking (IV) at 100-130 deg.C; (f) implanting impurity ions with great energy into the main surface of (II), using (IV) as mask, to form (I); and (g) removing (IV).