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visible light ausstrahlender halbleiterlaser (alxga1 - x) 0.5in0.5p-kristallschichten and procedures for the breeding of alxga1 - x) 0.5in0.5p-kristalls.
visible light ausstrahlender halbleiterlaser (alxga1 - x) 0.5in0.5p-kristallschichten and procedures for the breeding of alxga1 - x) 0.5in0.5p-kristalls.
In a visible light semiconductor laser with (AlxGa1-x)0.5In0.5P (0 /= x /= 1) crystal layers (52, 54) and a process for growing an(AlxGa1-x)0.5In0.5P (0 /= x /= 1) crystal, a GaAs substrate (51) on which (AlxGa1-x)0.5In0.5P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (AlxGa1-x)0.5In0.5P. As a result, a bandgap energy Eg of the (AlxGa1-x)0.5In0.5P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.
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机译:在具有(AlxGa1-x)0.5In0.5P(0 = x = 1)的可见光半导体激光器中,晶体层(52,54)和生长(AlxGa1-x)0.5In0.5P( 0 = x = 1)晶体,以选自MOVPE和MBE的外延方法在其上生长(AlxGa1-x)0.5In0.5P的GaAs衬底(51),该衬底为(110)平面,作为(AlxGa1-x)0.5In0.5P的晶体生长的主平面,相当于(110)平面的平面,(111)平面和与(111)平面等效的平面。结果,(AlxGa1-x)0.5In0.5P晶体的带隙能量Eg可以是与生长温度和V / III比无关的混合晶体固有的最大值。
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