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Rapid access memory circuit - uses groups of cells in memory with transfer through register that has bits beyond word length to aid mask access

机译:快速访问存储器电路-使用存储器中的单元组并通过寄存器传输,寄存器中的位长度超出字长,以帮助屏蔽访问

摘要

The memory circuit has memory cells (2) arranged in a matrix (1) that is addressable in groups (31-34) of cells by decoding an address (AD1). The data is carried on a bus (20) having as many bits as there are cells in each memory group (31-34). A register (43,44) connected to the bus exchanges data with the cell groups. The size of the register exceeds the word size and during a memory access cycle transfers a number of bits exceeding the word size. The extra bits enable masking to provide faster access to a memory zone or memory port. ADVANTAGE - Increased memory bandwidth for faster transfer of data, particularly with multi-port memory.
机译:该存储电路具有布置在矩阵(1)中的存储单元(2),该矩阵可通过解码地址(AD1)在单元组(31-34)中寻址。数据在具有与每个存储组(31-34)中的单元一样多的位的总线(20)上传送。连接到总线的寄存器(43,44)与单元组交换数据。寄存器的大小超过了字的大小,并且在存储器访问周期中传输了超过字大小的位数。额外的位可启用屏蔽功能,以更快地访问存储区或存储端口。优势-增加的内存带宽可更快地传输数据,尤其是在多端口内存中。

著录项

  • 公开/公告号FR2696023A1

    专利类型

  • 公开/公告日1994-03-25

    原文格式PDF

  • 申请/专利权人 DEVAUX FABRICE;

    申请/专利号FR19920011156

  • 发明设计人 DEVAUX FABRICE;

    申请日1992-09-18

  • 分类号G06F12/04;G06F15/40;G11C8/02;

  • 国家 FR

  • 入库时间 2022-08-22 04:33:41

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