Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon- organic compound in water

摘要

A finely structurable resist system for a dry development process is provided. A latent image is produced in a light-sensitive layer by imaging exposure and is intensified by treatment with, for example, an organosilicon compound. The etching resistance to an oxygen plasma is simultaneously increased. The light-sensitive layer preferably comprises anhydride or epoxy groups that are suitable for reaction with the functional groups of the organosilicon compounds. A silylizing treatment can be implemented with a solution or emulsion in a simple apparatus or can be implemented in the vapor phase.